The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors
نویسندگان
چکیده
In this article, we report the effect of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) based on the simulation with the extracted model parameters from experiment data before irradiation, after irradiation and after annealing. A simplified Vertical Bipolar Inter-Company (VBIC) static model is proposed to study the operational mechanism and the DC characteristics of SHBTs. The results show that the defects induced by irradiation are responsible for the changes on the DC characteristics of the devices. 2012 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 52 شماره
صفحات -
تاریخ انتشار 2012